The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 18, 2022

Filed:

May. 31, 2018
Applicant:

Sony Semiconductor Solutions Corporation, Kanagawa, JP;

Inventors:

Katsuhiko Fukasaku, Kanagawa, JP;

Shinichi Miyake, Kanagawa, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01L 29/66 (2006.01); H01L 21/822 (2006.01); H01L 27/02 (2006.01); H01L 27/04 (2006.01); H01L 29/08 (2006.01); H01L 29/423 (2006.01); H01L 29/786 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66795 (2013.01); H01L 21/822 (2013.01); H01L 27/0248 (2013.01); H01L 27/04 (2013.01); H01L 29/086 (2013.01); H01L 29/42384 (2013.01); H01L 29/786 (2013.01);
Abstract

[Problem to be Solved] To provide a transistor and an electronic device whose characteristics are easier to control. [Solution] A transistor including: a semiconductor substrate; an insulating layer provided on the semiconductor substrate; a semiconductor layer provided on the insulating layer in a protruding manner; and a gate electrode provided over a portion of the insulating layer on the semiconductor layer and the insulating layer. A middle portion of a channel region of the semiconductor layer covered by the gate electrode is provided in a shape different from a shape of at least one of ends of the channel region of the semiconductor layer.


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