The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 18, 2022
Filed:
Jun. 18, 2019
Sony Semiconductor Solutions Corporation, Kanagawa, JP;
Tetsuo Gocho, Kanagawa, JP;
Yuzo Fukuzaki, Kanagawa, JP;
Shinichi Miyake, Kanagawa, JP;
Kazuyuki Tomida, Kanagawa, JP;
SONY SEMICONDUCTOR SOLUTIONS CORPORATION, Kanagawa, JP;
Abstract
A semiconductor device includes a base, a first FET that includes at least two laminated channel structure portions, the channel structure portions each including a channel portion having a nanowire structure, a gate insulation film, and a gate electrode, and a second FET that includes a channel forming layer, a gate insulation layer, and a gate electrode. The first FET and the second FET are provided above the base. The channel portions of the first FET are disposed apart from each other in a laminating direction of the channel structure portions. Assuming that each of a distance between the channel portions of the first FET is a distance Land that a thickness of the gate insulation layer of the second FET is a thickness T, T≥(L/2) is satisfied.