The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 18, 2022
Filed:
Jan. 21, 2019
Nissan Motor Co., Ltd., Yokohama, JP;
Renault S.a.s., Boulogne-Billancourt, FR;
Toshiharu Marui, Kanagawa, JP;
Tetsuya Hayashi, Kanagawa, JP;
Keiichiro Numakura, Kanagawa, JP;
Wei Ni, Kanagawa, JP;
Ryota Tanaka, Kanagawa, JP;
Keisuke Takemoto, Kanagawa, JP;
NISSAN MOTOR CO., LTD., Yokohama, JP;
RENAULT s.a.s., Boulogne-Billancourt, FR;
Abstract
A semiconductor device includes a semiconductor base body, and a first main electrode and a second main electrode provided on the semiconductor base body. The semiconductor base body includes a drift region of a first conductivity type through which a main current flows, a column region of a second conductivity type arranged adjacent to the drift region in parallel to a current passage of the main current, a second electrode-connection region of the first conductivity type electrically connected to the second main electrode, and a low-density electric-field relaxation region of the first conductivity type having a lower impurity concentration than the drift region and arranged between the second electrode-connection region and the column region.