The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 18, 2022
Filed:
Jul. 14, 2020
Samsung Electronics Co., Ltd., Suwon-si, KR;
Gwi Deok Ryan Lee, Hwaseong-si, KR;
Jae Kyu Lee, Seongnam-si, KR;
Sang Chun Park, Seoul, KR;
Tae Yon Lee, Seoul, KR;
Jae Hoon Jeon, Hwaseong-si, KR;
Myung Lae Chu, Hwaseong-si, KR;
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, KR;
Abstract
An image sensor may include a substrate having a first surface and a second surface on opposite sides, a first transistor having a first gate disposed on the first surface, a photoelectric conversion layer which generates photocharges from light incident in a first direction, a second transistor having a transistor structure disposed between the first surface and the photoelectric conversion layer and spaced from the photoelectric conversion layer, and includes a semiconductor layer composed of a metal oxide semiconductor material. The semiconductor layer may have a third surface facing the first direction and a fourth surface opposite the third surface, with a second gate disposed on the semiconductor layer. The semiconductor layer may be connected to the first gate. A light blocking layer may be disposed between the third surface and the photoelectric conversion layer, and spaced from the photoelectric conversion layer.