The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 18, 2022

Filed:

Aug. 04, 2020
Applicant:

Sharp Kabushiki Kaisha, Sakai, JP;

Inventors:

Yoshihito Hara, Sakai, JP;

Tohru Daitoh, Sakai, JP;

Hajime Imai, Sakai, JP;

Masaki Maeda, Sakai, JP;

Tatsuya Kawasaki, Sakai, JP;

Hideki Kitagawa, Sakai, JP;

Yoshiharu Hirata, Sakai, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/12 (2006.01); G02F 1/1343 (2006.01); G02F 1/1368 (2006.01); G02F 1/1362 (2006.01);
U.S. Cl.
CPC ...
H01L 27/124 (2013.01); G02F 1/1368 (2013.01); G02F 1/134363 (2013.01); G02F 1/136227 (2013.01); G02F 1/136286 (2013.01); H01L 27/1225 (2013.01); H01L 27/1259 (2013.01); G02F 1/13685 (2021.01); G02F 1/136295 (2021.01);
Abstract

An active matrix substrate includes gate bus lines; source bus lines; a lower insulating layer; an oxide semiconductor TFT; and a pixel electrode, in which the oxide semiconductor TFT includes an oxide semiconductor layer disposed on the lower insulating layer, a gate electrode, a source electrode, and a first ohmic conductive portion that is coupled to the oxide semiconductor layer and the source electrode, the lower insulating layer includes a source opening portion exposing at least a portion of the source electrode, the first ohmic conductive portion is disposed on the lower insulating layer and in the source opening portion and is in direct contact with at least the portion of the source electrode in the source opening portion, and the first region of the oxide semiconductor layer is in direct contact with an upper surface of the first ohmic conductive portion.


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