The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 18, 2022
Filed:
Apr. 30, 2019
Applicant:
Renesas Electronics Corporation, Tokyo, JP;
Inventor:
Yukio Maki, Tokyo, JP;
Assignee:
RENESAS ELECTRONICS CORPORATION, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/51 (2006.01); H01L 27/11 (2006.01);
U.S. Cl.
CPC ...
H01L 27/1108 (2013.01); H01L 27/1112 (2013.01); H01L 29/518 (2013.01);
Abstract
A semiconductor device includes a semiconductor substrate having a main surface, a gate electrode formed on the main surface of the semiconductor substrate, a side-wall oxide film formed on a side wall of the gate electrode, a first insulating layer formed on the gate electrode and containing silicon nitride, and a second insulating layer formed between the gate electrode and the first insulating layer and containing silicon oxide.