The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 18, 2022

Filed:

Feb. 24, 2020
Applicant:

Fuji Electric Co., Ltd., Kanagawa, JP;

Inventor:

Tatsuya Naito, Matsumoto, JP;

Assignee:

FUJI ELECTRIC CO., LTD., Kanagawa, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/00 (2006.01); H01L 27/07 (2006.01); H01L 29/739 (2006.01); H01L 29/861 (2006.01); H01L 27/06 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0761 (2013.01); H01L 27/0664 (2013.01); H01L 29/7397 (2013.01); H01L 29/8613 (2013.01);
Abstract

A semiconductor device including a semiconductor substrate, first and second transistor sections and a diode section provided on the substrate, is provided. The diode section is arranged to be adjacent to and sandwiched between the first and second transistor sections in a predetermined arrangement direction. The diode section includes a drift region; a base region above the drift region; first cathode regions and second cathode regions below the drift region. The first and second transistor sections each include a collector region. The first cathode regions are provided continuously between the collector regions of the first and second transistor sections. One end and another end of the first cathode regions in the arrangement direction are in contact with the collector regions of the first and second transistor sections, respectively. The first and second cathode regions are in contact with each other and alternating in a direction orthogonal to the arrangement direction.


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