The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 18, 2022

Filed:

May. 11, 2021
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventor:

Seok Han Park, Seongnam-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/528 (2006.01); H01L 21/768 (2006.01); H01L 23/532 (2006.01); H01L 23/522 (2006.01); H01L 21/311 (2006.01);
U.S. Cl.
CPC ...
H01L 23/5283 (2013.01); H01L 21/31144 (2013.01); H01L 21/7682 (2013.01); H01L 21/76808 (2013.01); H01L 21/76813 (2013.01); H01L 23/5226 (2013.01); H01L 23/53295 (2013.01);
Abstract

A semiconductor device includes a first interlayer insulating film on a substrate, a via which penetrates the first interlayer insulating film, a first etching stop film which extends along an upper surface of the first interlayer insulating film, a second interlayer insulating film on the first etching stop film, the second interlayer insulating film including a plurality of periodically arranged air gaps, a first wiring pattern in the second interlayer insulating film, the first wiring pattern penetrating the first etching stop film and is connected to the via, and a capping film which covers an upper surface of the second interlayer insulating film and an upper surface of the first wiring pattern, each of the plurality of air gaps in the second interlayer insulating film extending from the first etching stop film to the capping film.


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