The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 18, 2022
Filed:
Oct. 27, 2020
Qualcomm Incorporated, San Diego, CA (US);
Ramaprasath Vilangudipitchai, San Diego, CA (US);
Gudoor Reddy, Berkeley, CA (US);
Samrat Sinharoy, San Diego, CA (US);
Smeeta Heggond, Bagalkot, IN;
Anil Kumar Koduru, San Diego, CA (US);
Kamesh Medisetti, Bangalore, IN;
Seung Hyuk Kang, San Diego, CA (US);
QUALCOMM INCORPORATED, San Diego, CA (US);
Abstract
A cell on an IC includes a first set of Mlayer interconnects coupled to a first voltage, a second set of Mlayer interconnects coupled to a second voltage different than the first voltage, and a MIM capacitor structure below the Mlayer. The MIM capacitor structure includes a CTM, a CBM, and an insulator between portions of the CTM and the CBM. The first set of Mlayer interconnects is coupled to the CTM. The second set of Mlayer interconnects is coupled to the CBM. The MIM capacitor structure is between the Mlayer and an Mlayer. The MIM capacitor structure includes a plurality of openings. The MIM capacitor structure is continuous within the cell and extends to at least two edges of the cell. In one configuration, the MIM capacitor structure extends to each edge of the cell.