The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 18, 2022
Filed:
Jul. 14, 2021
Imec Vzw, Leuven, BE;
Ming Zhao, Bertem, BE;
Annelies Delabie, Bierbeek, BE;
IMEC VZW, Leuven, BE;
Abstract
A method for manufacturing a semiconductor structure that comprises providing a monocrystalline silicon base layer comprising a first region for manufacturing the III-N semiconductor device and a second region for manufacturing the silicon semiconductor device; providing on the monocrystalline silicon base layer a mask layer, the mask layer being interrupted, in the first region, by a recess in the monocrystalline silicon base layer, wherein the mask layer comprises a 2D material; forming, selectively, a layer of gamma-AlOat the bottom of the recess by a first growth process; forming, selectively on the layer of gamma-AlO, a III-N semiconductor device stack by a second growth process, and thereafter; manufacturing, in the second region, at least partially a silicon semiconductor device.