The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 18, 2022
Filed:
Jun. 25, 2021
Applicant:
Korea Institute of Ceramic Engineering and Technology, Jinju-si, KR;
Inventors:
Dae-Woo Jeon, Jinju-si, KR;
Ji-Hyeon Park, Jinju-si, KR;
Assignee:
KOREA INSTITUTE OF CERAMIC ENGINEERING AND TECHNOLOGY, Jinju-si, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 21/265 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02565 (2013.01); H01L 21/02636 (2013.01); H01L 21/265 (2013.01);
Abstract
Disclosed is a method of manufacturing a gallium oxide thin film for a power semiconductor using a dopant activation technology that maximizes dopant activation effect and rearrangement effect of lattice in a grown epitaxial at the same time by performing in-situ annealing in a growth condition of a nitrogen atmosphere at the same time as the growth of a doped layer is finished.