The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 18, 2022

Filed:

Sep. 09, 2020
Applicant:

Kioxia Corporation, Tokyo, JP;

Inventors:

Shuichi Tsubata, Kuwana Mie, JP;

Naoki Akiyama, Seoul, KR;

Assignee:

KIOXIA CORPORATION, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/00 (2006.01); G11C 11/16 (2006.01); H01L 43/08 (2006.01); H01L 43/12 (2006.01); H01L 43/10 (2006.01); H01L 43/02 (2006.01);
U.S. Cl.
CPC ...
G11C 11/161 (2013.01); H01L 43/02 (2013.01); H01L 43/08 (2013.01); H01L 43/10 (2013.01); H01L 43/12 (2013.01);
Abstract

According to one embodiment, a magnetoresistive memory device includes: a first conductor; a layer stack; an insulator on a side surface of the layer stack; a second conductor on a second surface of the layer stack; a third conductor; and a fourth conductor on the third conductor. The layer stack includes a first ferromagnetic layer, a second ferromagnetic layer, and an insulating layer between the first ferromagnetic layer and the second ferromagnetic layer and has a first surface in contact with the first conductor. The second surface is at an opposite side of the first surface. The third conductor has a portion on the second conductor and a portion on a side surface of the insulator.


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Tsubata, Shuichi. (2022). Magnetoresistive memory device (U.S. Patent No. 11475931). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11475931

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