The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 18, 2022

Filed:

Jan. 05, 2021
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Young-Hoon Son, Suwon-si, KR;

Si-Hong Kim, Hwaseong-si, KR;

Chang-Kyo Lee, Seoul, KR;

Jung-Hwan Choi, Hwaseong-si, KR;

Kyung-Soo Ha, Hwaseong-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03K 19/003 (2006.01); G11C 7/24 (2006.01); H03H 7/38 (2006.01); G11C 7/10 (2006.01);
U.S. Cl.
CPC ...
G11C 7/24 (2013.01); G11C 7/1051 (2013.01); G11C 7/1096 (2013.01); H03H 7/38 (2013.01);
Abstract

A method of controlling on-die termination (ODT) in a multi-rank system including a plurality of memory ranks is provided. The method includes: enabling ODT circuits of the plurality of memory ranks into an initial state when the multi-rank system is powered on; enabling the ODT circuits of a write target memory rank and non-target memory ranks among the plurality of memory ranks during a write operation; and disabling the ODT circuit of a read target memory rank among the plurality of memory ranks while enabling the ODT circuits of non-target memory ranks among the plurality of memory ranks during a read operation.


Find Patent Forward Citations

Loading…