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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11473212 B1

PDFFull Text
Date of Patent:
Oct. 18, 2022

Filed:

May. 29, 2018

Group 13 (iii) nitride thick layer formed on an underlying layer having high and low carrier concentration regions with different defect densities

Applicant:

Ngk Insulators, Ltd., Nagoya, JP;

Inventors:

Makoto Iwai, Kasugai, JP;

Takashi Yoshino, Ama, JP;

Assignee:

NGK INSULATORS, LTD., Aichi, JP;

Attorney:

Flynn Thiel, P.C.

Primary Examiner:

Anh D Mai

Int. Cl.
CPC ...
H01L 33/32 (2010.01); C30B 29/38 (2006.01); C30B 25/18 (2006.01); H01L 21/02 (2006.01); C30B 19/12 (2006.01); C30B 19/02 (2006.01); H01L 21/205 (2006.01); H01L 21/208 (2006.01); C30B 29/40 (2006.01); H01L 33/00 (2010.01);
U.S. Cl.
CPC ...
C30B 29/38 (2013.01); C30B 19/02 (2013.01); C30B 19/12 (2013.01); C30B 25/183 (2013.01); C30B 29/406 (2013.01); H01L 21/0242 (2013.01); H01L 21/0254 (2013.01); H01L 21/0262 (2013.01); H01L 21/02458 (2013.01); H01L 21/02494 (2013.01); H01L 21/02505 (2013.01); H01L 21/205 (2013.01); H01L 21/208 (2013.01); H01L 33/32 (2013.01); H01L 21/02573 (2013.01); H01L 33/0075 (2013.01);
Abstract

A crystal substrateincludes an underlying layerand a thick film. The underlying layeris composed of a crystal of a nitride of a group 13 element and includes a first main faceand a second main face. The thick filmis composed of a crystal of a nitride of a group 13 element and provided over the first main face of the underlying layer. The underlying layerincludes a low carrier concentration regionand a high carrier concentration regionboth extending between the first main faceand the second main face

Find Patent Forward Citations

Iwai, Makoto. (2022). Group 13 (iii) nitride thick layer formed on an underlying layer having high and low carrier concentration regions with different defect densities (U.S. Patent No. 11473212). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11473212

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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