The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 18, 2022

Filed:

Jan. 10, 2019
Applicant:

Paragraf Limited, Somersham, GB;

Inventors:

Simon Thomas, Somersham, GB;

Ivor Guiney, Somersham, GB;

Assignee:

Paragraf Limited, Somersham, GB;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C01B 32/186 (2017.01); C01B 32/194 (2017.01); C23C 16/26 (2006.01); C23C 16/455 (2006.01); C23C 16/56 (2006.01); C30B 25/18 (2006.01); C30B 29/02 (2006.01); C30B 33/04 (2006.01); G01R 33/07 (2006.01); H01L 43/14 (2006.01);
U.S. Cl.
CPC ...
C01B 32/186 (2017.08); C01B 32/194 (2017.08); C23C 16/26 (2013.01); C23C 16/45572 (2013.01); C23C 16/56 (2013.01); C30B 25/18 (2013.01); C30B 29/02 (2013.01); C30B 33/04 (2013.01); G01R 33/07 (2013.01); H01L 43/14 (2013.01); C01B 2204/02 (2013.01); C01B 2204/04 (2013.01);
Abstract

A method for the production of a graphene layer structure having from 1 to 100 graphene layers, the method comprising providing a substrate having a thermal resistance equal to or greater than that of sapphire, on a heated susceptor in a reaction chamber, the chamber having a plurality of cooled inlets arranged so that, in use, the inlets are distributed across the substrate and have a constant separation from the substrate, supplying a flow comprising a precursor compound through the inlets and into the reaction chamber to thereby decompose the precursor compound and form graphene on the substrate, wherein the inlets are cooled to less than 100° C., preferably 50 to 60° C., and the susceptor is heated to a temperature of at least 50° C. in excess of a decomposition temperature of the precursor, using a laser to selectively ablate graphene from the substrate, wherein the laser has a wavelength in excess of 600 nm and a power of less than 50 Watts.


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