The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 11, 2022

Filed:

Jun. 30, 2021
Applicant:

Sony Semiconductor Solutions Corporation, Kanagawa, JP;

Inventors:

Takeshi Yanagita, Tokyo, JP;

Masaaki Takizawa, Kanagawa, JP;

Yuuji Nishimura, Kumamoto, JP;

Shinichi Arakawa, Kumamoto, JP;

Yuugo Nakamura, Nagasaki, JP;

Yohei Chiba, Kumamoto, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H04N 5/378 (2011.01); H01L 27/146 (2006.01); H04N 5/363 (2011.01); H04N 5/355 (2011.01); H04N 5/3745 (2011.01);
U.S. Cl.
CPC ...
H04N 5/378 (2013.01); H01L 27/14607 (2013.01); H01L 27/14609 (2013.01); H01L 27/14636 (2013.01); H01L 27/14645 (2013.01); H04N 5/35563 (2013.01); H04N 5/363 (2013.01); H04N 5/37457 (2013.01);
Abstract

A pixel is included, the pixel including a photoelectric conversion portion configured to convert incident light to a charge by photoelectric conversion and accumulate the charge, a charge transfer unit configured to transfer the charge generated in the photoelectric conversion portion, a diffusion layer to which the charge is transferred through the charge transfer unit, the diffusion layer having a predetermined storage capacitance, a conversion unit configured to convert the charge transferred to the diffusion layer to a pixel signal, and connection wiring configured to connect the diffusion layer and the conversion unit. The connection wiring is connected to the diffusion layer and the conversion unit through contact wiring extending in a vertical direction with respect to a semiconductor substrate on which the diffusion layer is formed and is formed closer to the semiconductor substrate than other wiring provided in the pixel.


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