The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 11, 2022
Filed:
Mar. 28, 2019
Hrl Laboratories, Llc, Malibu, CA (US);
Raviv Perahia, Malibu, CA (US);
Logan D. Sorenson, Malibu, CA (US);
Lian X. Huang, Malibu, CA (US);
David T. Chang, Calabasas, CA (US);
Makena S. White, Malibu, CA (US);
Jeremy Bregman, Malibu, CA (US);
HRL LABORATORIES, LLC, Malibu, CA (US);
Abstract
A method of making a SiC resonator includes forming a layer of an oxide material on a relatively thick wafer of SiC; bonding the layer of oxide material on the relatively thick wafer of SiC to a handle wafer having at least an oxide exterior surface, the resulting bond being substantially free of voids; planarizing the relatively thick wafer of SiC to a desired thickness; forming top and bottom electrodes on the wafer of SiC wafer to define a SiC wafer resonator portion; and forming a trench around the top and bottom electrodes, the tench completely penetrating the planarized wafer of SiC around a majority of a distance surrounding said top and bottom electrodes, except for one or more tether regions of the planarized wafer of SiC which remain physically coupled a remaining portion the SiC wafer resonator portion which defines a frame formed of the planarized wafer of SiC surrounding the SiC wafer resonator portion.