The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 11, 2022

Filed:

Mar. 13, 2019
Applicant:

Murata Manufacturing Co., Ltd., Nagaokakyo, JP;

Inventors:

Souko Fukahori, Nagaokakyo, JP;

Nobuo Sakai, Nagaokakyo, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H02H 9/04 (2006.01); H01L 49/02 (2006.01); H01L 27/02 (2006.01);
U.S. Cl.
CPC ...
H02H 9/046 (2013.01); H01L 27/0248 (2013.01); H01L 28/10 (2013.01); H01L 28/40 (2013.01);
Abstract

A thin-film ESD protection device includes a semiconductor substrate including a low-resistivity portion at least adjacent to a first principal surface thereof; an insulating layer formed on the first principal surface; first and second input/output electrodes, and a ground electrode formed on a surface of the insulating layer. Moreover, a diode element and a capacitor element are formed adjacent to the first principal surface. The diode element is connected at a first end thereof to the first input/output electrode and connected at a second end thereof to the ground electrode. The capacitor element is connected at a third end thereof to the second input/output electrode and connected at a fourth end thereof to the ground electrode. The second end of the diode element and the fourth end of the capacitor element are connected by the low-resistivity portion of the semiconductor substrate to the ground electrode.


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