The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 11, 2022

Filed:

Aug. 31, 2018
Applicant:

Suzhou Lekin Semiconductor Co., Ltd., Taicang, CN;

Inventors:

Sang Youl Lee, Seoul, KR;

Ki Man Kang, Seoul, KR;

Do Yub Kim, Seoul, KR;

Eun Dk Lee, Seoul, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/50 (2010.01); F21S 41/153 (2018.01); F21S 41/19 (2018.01); H01L 33/00 (2010.01); H01L 27/15 (2006.01); H01L 33/38 (2010.01); H01L 33/44 (2010.01); H01L 33/58 (2010.01); H01L 33/62 (2010.01); H01L 33/06 (2010.01); H01L 33/30 (2010.01);
U.S. Cl.
CPC ...
H01L 33/505 (2013.01); F21S 41/153 (2018.01); F21S 41/192 (2018.01); H01L 27/156 (2013.01); H01L 33/0093 (2020.05); H01L 33/382 (2013.01); H01L 33/44 (2013.01); H01L 33/58 (2013.01); H01L 33/62 (2013.01); H01L 33/06 (2013.01); H01L 33/30 (2013.01); H01L 2933/0016 (2013.01); H01L 2933/0025 (2013.01); H01L 2933/0041 (2013.01);
Abstract

Disclosed in an embodiment are a semiconductor device and a head lamp comprising the same, the semiconductor device comprising: a substrate; a plurality of semiconductor structures arranged at a center part of the substrate; first and second pads arranged at an edge part of the substrate; a first wiring line electrically connecting at least one of the plurality of semiconductor structures to the first pad; a second wiring line electrically connecting at least one of the plurality of semiconductor structures to the second pad; and a wavelength conversion layer arranged on the plurality of semiconductor structures, wherein the plurality of semiconductor structures is arranged to be spaced apart from each other in a first direction and a second direction, the first direction and the second direction cross each other, the interval distance between the plurality of semiconductor structures is 5 μm to 40 μm and the thickness of the wavelength conversion layer is 1 μm to 50 μm.


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