The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 11, 2022

Filed:

Jan. 21, 2021
Applicant:

Excellence Opto. Inc., Miaoli County, TW;

Inventors:

Fu-Bang Chen, Miaoli County, TW;

Kuo-Hsin Huang, Miaoli County, TW;

Assignee:

EXCELLENCE OPTO. INC., Hsinchu Science Park, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/04 (2010.01); H01L 33/38 (2010.01); H01L 33/62 (2010.01); H01L 33/40 (2010.01); H01L 33/12 (2010.01); H01L 33/46 (2010.01);
U.S. Cl.
CPC ...
H01L 33/04 (2013.01); H01L 33/12 (2013.01); H01L 33/38 (2013.01); H01L 33/405 (2013.01); H01L 33/46 (2013.01); H01L 33/62 (2013.01);
Abstract

A vertical light emitting diode structure with high current dispersion and high reliability comprises a conductive substrate with a central region and a side region; a light emitting semiconductor layer is disposed on the central region; an ohmic contact metal layer is disposed at a center of the light emitting semiconductor layer; an N-type electrode is disposed at the side region and is connected with the ohmic contact metal layer and the N-type electrode through an N-type electrode bridging structure; a working current is diffused from the center of the light emitting semiconductor layer to have high current dispersion, so that the problem of heat dissipation of local high current caused by the design that the N-type electrode is disposed on the edge can be solved.


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