The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 11, 2022
Filed:
Nov. 30, 2020
Applicant:
Key Foundry Co., Ltd., Cheongju-si, KR;
Inventor:
Young Bae Kim, Sejong-si, KR;
Assignee:
KEY FOUNDRY CO., LTD., Cheongju-si, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/00 (2006.01); H01L 29/78 (2006.01); H01L 29/861 (2006.01); H01L 29/06 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7818 (2013.01); H01L 29/0623 (2013.01); H01L 29/0688 (2013.01); H01L 29/8611 (2013.01); H01L 29/8613 (2013.01);
Abstract
A semiconductor device includes a source region and a drain region formed in a substrate and having different conductivity types, an insulating film formed between the source region and the drain region, a deep well region formed under the insulating film, and a pinch-off region formed under the insulating film and having a same conductivity type as the deep well region, wherein a depth of a bottom surface of the pinch-off region is different from a depth of a bottom surface of the deep well region.