The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 11, 2022
Filed:
Nov. 12, 2020
Applicant:
SK Hynix Inc., Gyeonggi-do, KR;
Inventors:
Wan Joo Maeng, Gyeonggi-do, KR;
Hyun Soo Jin, Gyeonggi-do, KR;
Se Hun Kang, Gyeonggi-do, KR;
Ki Vin Im, Gyeonggi-do, KR;
Kyoung Ryul Yoon, Gyeonggi-do, KR;
Assignee:
SK hynix Inc., Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/51 (2006.01); H01L 27/11502 (2017.01); H01L 27/11585 (2017.01); H01L 21/28 (2006.01); H01L 49/02 (2006.01);
U.S. Cl.
CPC ...
H01L 29/516 (2013.01); H01L 27/11502 (2013.01); H01L 27/11585 (2013.01); H01L 28/56 (2013.01); H01L 29/40111 (2019.08);
Abstract
A semiconductor device includes: a first electrode; a second electrode; and a dielectric layer stack positioned between the first electrode and the second electrode, the dielectric layer stack including a first anti-ferroelectric layer, a second anti-ferroelectric layer, and a ferroelectric layer between the first anti-ferroelectric layer and the second anti-ferroelectric.