The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 11, 2022
Filed:
Nov. 30, 2020
Applicant:
Fuji Electric Co., Ltd., Kawasaki, JP;
Inventors:
Makoto Utsumi, Matsumoto, JP;
Masaki Miyazato, Matsumoto, JP;
Assignee:
FUJI ELECTRIC CO., LTD., Kawasaki, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/268 (2006.01); H01L 29/16 (2006.01); H01L 29/45 (2006.01); H01L 21/04 (2006.01);
U.S. Cl.
CPC ...
H01L 29/1608 (2013.01); H01L 21/0485 (2013.01); H01L 21/268 (2013.01);
Abstract
A semiconductor device includes a semiconductor device provided on a semiconductor substrate and an ohmic electrode provided on a back surface of the semiconductor device and containing a nickel silicide and a molybdenum carbide, or the nickel silicide and a titanium carbide. The ohmic electrode is configured by first regions where a silicide is thick and second regions where the silicide is thin; a ratio of an arithmetic area of the second regions to an arithmetic area of the ohmic electrode is in a range from 10% to 30% in a plan view.