Semiconductor device, semiconductor device manufacturing method, inverter circuit, driver device, vehicle, and elevator

Abstract

This semiconductor device according to an embodiment includes: a silicon carbide layer; a gate electrode; a silicon oxide layer between the silicon carbide layer and the gate electrode; and a region between the silicon carbide layer and the silicon oxide layer and having a nitrogen concentration not less than 1×10cm. A nitrogen concentration distribution in the silicon carbide layer, the silicon oxide layer, and the region has its peak in the region, and a state density Zin a portion is not more than 1×10cm. The portion is within 100 nm from the silicon oxide layer toward the silicon carbide layer. A nitrogen concentration and a carbon concentration in a position 1 nm from the peak toward the silicon oxide layer is not more than 1×10cm, and a nitrogen concentration in a position 1 nm from the peak toward the silicon carbide layer is not more than 1×10cm.