The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 11, 2022
Filed:
Nov. 06, 2020
Applicant:
SK Hynix Inc., Icheon-si Gyeonggi-do, KR;
Inventor:
In Su Park, Icheon-si Gyeonggi-do, KR;
Assignee:
SK hynix Inc., Icheon-si Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/94 (2006.01); H01L 29/76 (2006.01); H01L 27/11582 (2017.01); H01L 29/10 (2006.01); H01L 29/417 (2006.01); H01L 29/45 (2006.01); H01L 27/11556 (2017.01); H01L 27/24 (2006.01); H01L 21/02 (2006.01); H01L 21/311 (2006.01); H01L 21/3213 (2006.01); H01L 21/28 (2006.01);
U.S. Cl.
CPC ...
H01L 27/11582 (2013.01); H01L 27/11556 (2013.01); H01L 27/249 (2013.01); H01L 29/1037 (2013.01); H01L 29/41741 (2013.01); H01L 29/456 (2013.01); H01L 21/02236 (2013.01); H01L 21/02532 (2013.01); H01L 21/02636 (2013.01); H01L 21/31144 (2013.01); H01L 21/32139 (2013.01); H01L 29/40114 (2019.08); H01L 29/40117 (2019.08);
Abstract
A semiconductor device includes a stack structure, a channel layer passing through the stack structure, a memory layer enclosing the channel layer and including first and second openings which expose the channel layer, a well plate coupled to the channel layer through the first opening, and a source plate coupled to the channel layer through the second opening.