The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 11, 2022

Filed:

Nov. 13, 2020
Applicant:

Nanya Technology Corporation, New Taipei, TW;

Inventor:

Tseng-Fu Lu, New Taipei, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/108 (2006.01); G11C 5/06 (2006.01);
U.S. Cl.
CPC ...
H01L 27/10855 (2013.01); G11C 5/063 (2013.01); H01L 27/10814 (2013.01); H01L 27/10823 (2013.01); H01L 27/10876 (2013.01); H01L 27/10885 (2013.01); H01L 27/10891 (2013.01);
Abstract

The present disclosure provides a semiconductor device. The semiconductor device includes a substrate, a storage capacitor, an access transistor, and at least one conductive feature for electrically coupling the storage capacitor to the access transistor. The substrate includes at least one isolation feature defining a plurality of active regions, wherein a plurality of impurity regions of the access transistor are in the active region. The storage capacitor is disposed over the substrate, and the conductive feature extends from the storage capacitor and into a portion of the substrate where one of the impurity regions is disposed. As a result, a contact area between the access transistor and the conductive feature is increased, and an operation speed of the compact semiconductor device is increased.


Find Patent Forward Citations

Loading…