The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 11, 2022
Filed:
Jan. 12, 2021
Samsung Electronics Co., Ltd., Suwon-si, KR;
Chanwook Lee, Gwangju-si, KR;
Seungkwon Kim, Hwaseong-si, KR;
Jaechul Kim, Hwaseong-si, KR;
Younggun Ko, Seongnam-si, KR;
Yuri Masuoka, Seongnam-si, KR;
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, KR;
Abstract
Disclosed is a semiconductor device comprising a substrate including PMOSFET and NMOSFET regions, first active fins at the PMOSFET region, second active fins at the NMOSFET region, a gate electrode extending in a first direction and running across the first and second active fins, a first source/drain pattern on the first active fins and connecting the first active fins to each other, a second source/drain pattern on the second active fins and connecting the second active fins to each other, a first active contact electrically connected to the first source/drain pattern, and a second active contact electrically connected to the second source/drain pattern. A maximum width of the first active contact in the first direction is less than a maximum width of the second active in the first direction.