The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 11, 2022

Filed:

Jul. 29, 2020
Applicant:

Arm Limited, Cambridge, GB;

Inventors:

Lalit Gupta, Cupertino, CA (US);

Cyrille Nicolas Dray, Antibes, FR;

El Mehdi Boujamaa, Valbonne, FR;

Assignee:

Arm Limited, Cambridge, GB;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/408 (2006.01); G11C 11/4093 (2006.01); G11C 11/16 (2006.01); G11C 7/10 (2006.01);
U.S. Cl.
CPC ...
G11C 11/4082 (2013.01); G11C 7/106 (2013.01); G11C 7/1087 (2013.01); G11C 11/1673 (2013.01); G11C 11/1675 (2013.01); G11C 11/1697 (2013.01); G11C 11/4093 (2013.01);
Abstract

Various implementations described herein are related to a device having memory circuitry activated by a power-gated supply. The device may include level shifting circuitry that receives a switch control signal in a first voltage domain, shifts the switch control signal in the first voltage domain to a second voltage domain, and provides the switch control signal in the second voltage domain. The device may include power-gating circuitry activated by the switch control signal in the second voltage domain, and the power-gating circuitry may provide the power-gated supply to the memory circuitry to trigger activation of the memory circuitry with the power-gated supply when activated by the switch control signal in the second voltage domain.


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