The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 11, 2022
Filed:
Apr. 07, 2020
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, KR;
Inventors:
Tae Jin Park, Yongin-si, KR;
Won Seok Yoo, Seoul, KR;
Keun Nam Kim, Yongin-si, KR;
Hyo-Sub Kim, Seoul, KR;
So Hyun Park, Seoul, KR;
In Kyoung Heo, Hwaseong-si, KR;
Yoo Sang Hwang, Yongin-si, KR;
Assignee:
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, KR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G11C 5/06 (2006.01); H01L 27/108 (2006.01);
U.S. Cl.
CPC ...
G11C 5/063 (2013.01); H01L 27/10814 (2013.01); H01L 27/10823 (2013.01); H01L 27/10855 (2013.01); H01L 27/10876 (2013.01); H01L 27/10885 (2013.01); H01L 27/10888 (2013.01);
Abstract
A semiconductor device is provided. The semiconductor device includes a substrate a bit line structure disposed on the substrate, a trench adjacent to at least one side of the bit line structure, a storage contact structure disposed within the trench, and comprising a storage contact, a silicide layer, and a storage pad which are stacked sequentially. A spacer structure is disposed between the bit line structure and the storage contact structure.