The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 04, 2022
Filed:
May. 10, 2019
Hefei Xinsheng Optoelectronics Technology Co., Ltd., Anhui, CN;
Beijing Boe Technology Development Co., Ltd., Beijing, CN;
Rui Peng, Beijing, CN;
Qinghe Wang, Beijing, CN;
Lei Zhang, Beijing, CN;
Xinxin Wang, Beijing, CN;
Yue Hu, Beijing, CN;
Zhijie Ye, Beijing, CN;
HEFEI XINSEENG OPTOELECTRONICS TECHNOLOGY CO., LTD., Anhui, CN;
Beijing BOE Technology Development Co., Ltd., Beijing, CN;
Abstract
Embodiments of the present disclosure provide an organic light emitting transistor comprising: a substrate, and a gate electrode, a gate insulating layer, source/drain electrodes and a light emitting functional layer disposed on the substrate, wherein the organic light emitting transistor further comprises an external electrode coupled to the gate electrode in series, wherein a temperature-dependent resistance change rate of the gate electrode is different from a temperature-dependent resistance change rate of the external electrode.