The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 04, 2022
Filed:
Sep. 30, 2020
Samsung Electronics Co., Ltd., Suwon-si, KR;
Jung-Hoon Bak, Suwon-si, KR;
Myoung-Su Son, Seoul, KR;
Jae-Chul Shim, Hwaseong-si, KR;
Gwan-Hyeob Koh, Seoul, KR;
Yoon-Jong Song, Hwaseong-si, KR;
Samsung Electronics Co., Ltd., Suwon-si, KR;
Abstract
In a method of manufacturing an MRAM device, a memory unit including a lower electrode, an MTJ structure and an upper electrode sequentially stacked is formed on a substrate. A protective layer structure including a capping layer, a sacrificial layer and an etch stop layer sequentially stacked is formed on the substrate to cover the memory unit. An insulating interlayer is formed on the protective layer structure. The insulating interlayer is formed to form an opening exposing the protective layer structure. The exposed protective layer structure is partially removed to expose the upper electrode. A wiring is formed on the exposed upper electrode to fill the opening.