The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 04, 2022

Filed:

Dec. 30, 2019
Applicant:

Playnitride Display Co., Ltd., MiaoLi County, TW;

Inventors:

Yi-Ching Chen, MiaoLi County, TW;

Yu-Chu Li, MiaoLi County, TW;

Assignee:

PlayNitride Display Co., Ltd., MiaoLi County, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/22 (2010.01); H01L 33/44 (2010.01); H01L 27/15 (2006.01); H01L 33/32 (2010.01); H01L 33/38 (2010.01); H01L 33/06 (2010.01);
U.S. Cl.
CPC ...
H01L 33/22 (2013.01); H01L 27/15 (2013.01); H01L 33/32 (2013.01); H01L 33/38 (2013.01); H01L 33/44 (2013.01); H01L 33/06 (2013.01);
Abstract

A micro light emitting diode chip includes a light emitting layer, a first type semiconductor layer, and a second type semiconductor layer. The light emitting layer includes a metal element and a plurality of non-epitaxial media. The non-epitaxial media are separated from each other to disperse the metal element. A spacing between any two adjacent non-epitaxial media is less than 100 nanometers. The first type semiconductor layer is disposed on one side of the light emitting layer. The second type semiconductor layer is disposed on the other side of the light emitting layer.


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