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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11462655 B1

PDFFull Text
Date of Patent:
Oct. 04, 2022

Filed:

Aug. 14, 2017

Tandem solar cell and method of manufacturing the same

Applicant:

Lg Electronics Inc., Seoul, KR;

Inventor:

Seh-Won Ahn, Seoul, KR;

Assignee:

LG Electronics Inc., Seoul, KR;

Attorney:

Fish & Richardson P.C.

Primary Examiner:

Bethany L Martin

Assistant Examiner:

Kourtney R S Carlson

Int. Cl.
CPC ...
H02S 10/30 (2014.01); H01L 31/078 (2012.01); H01L 31/0216 (2014.01); H01L 51/44 (2006.01); H01L 31/0224 (2006.01); H01L 27/30 (2006.01); H01L 51/00 (2006.01); H01G 9/00 (2006.01); H01G 9/20 (2006.01); H01L 31/0236 (2006.01); H01L 31/0687 (2012.01); H01L 31/0725 (2012.01); H01L 31/18 (2006.01); H01L 51/42 (2006.01);
U.S. Cl.
CPC ...
H01L 31/078 (2013.01); H01G 9/0029 (2013.01); H01G 9/2009 (2013.01); H01L 27/302 (2013.01); H01L 31/02167 (2013.01); H01L 31/02363 (2013.01); H01L 31/022466 (2013.01); H01L 31/0687 (2013.01); H01L 31/0725 (2013.01); H01L 31/1804 (2013.01); H01L 31/186 (2013.01); H01L 31/1884 (2013.01); H01L 51/0096 (2013.01); H01L 51/4213 (2013.01); H01L 51/442 (2013.01); Y02E 10/549 (2013.01);
Abstract

The present disclosure relates to a tandem solar cell and a method of manufacturing the same, and more particularly, to a tandem solar cell having a perovskite solar cell stacked on and bonded to a silicon solar cell and a method of manufacturing the same. According to the present disclosure, a tandem solar cell embodied by using a homojunction silicon solar cell is provided with a first passivation pattern so that a part of an emitter layer under the first passivation pattern is exposed, thereby protecting, by the first passivation pattern, the emitter layer during high temperature firing for forming a second electrode, reducing surface defects of the emitter layer, and reducing a problem in that characteristics of the perovskite solar cell are degraded.

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