The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 04, 2022

Filed:

Jul. 08, 2019
Applicant:

Lg Electronics Inc., Seoul, KR;

Inventors:

Wonjae Chang, Seoul, KR;

Sungjin Kim, Seoul, KR;

Juhwa Cheong, Seoul, KR;

Junyong Ahn, Seoul, KR;

Assignee:

LG ELECTRONICS INC., Seoul, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/0745 (2012.01); H01L 31/0224 (2006.01); H01L 31/18 (2006.01); H01L 31/0288 (2006.01); H01L 31/0216 (2014.01); H01L 31/0236 (2006.01); H01L 31/0368 (2006.01);
U.S. Cl.
CPC ...
H01L 31/0745 (2013.01); H01L 31/0288 (2013.01); H01L 31/02167 (2013.01); H01L 31/02363 (2013.01); H01L 31/022425 (2013.01); H01L 31/03685 (2013.01); H01L 31/182 (2013.01); H01L 31/1824 (2013.01); H01L 31/1864 (2013.01); Y02E 10/546 (2013.01); Y02P 70/50 (2015.11);
Abstract

Disclosed is a solar cell including a semiconductor substrate, and a dopant layer disposed over one surface of the semiconductor substrate and having a crystalline structure different from that of the semiconductor substrate, the dopant layer including a dopant. The dopant layer includes a plurality of semiconductor layers stacked one above another in a thickness direction thereof, and an interface layer interposed therebetween. The interface layer is an oxide layer having a higher concentration of oxygen than that in each of the plurality of semiconductor layers.


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