The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 04, 2022
Filed:
Aug. 11, 2020
Mitsubishi Electric Corporation, Tokyo, JP;
Mitsubishi Electric Corporation, Tokyo, JP;
Abstract
An object of the present invention is to provide a semiconductor device capable of reducing the on-voltage and a manufacturing method thereof. According to the present invention, a semiconductor device includes a Si substrate, a p-type anode layer provided on the front surface of the Si substrate, an anode electrode provided on the p-type anode layer, an n-type cathode layer and a p-type cathode layer provided adjacent to each other on a back surface of the Si substrate, an Al alloy layer provided on the n-type cathode layer and containing Si, and an Al alloy layer provided on the p-type cathode layer and containing Si, in which impurity concentration in the n-type cathode layer is 1E19 cmor higher and impurity concentration in the p-type cathode layer is 10% or lower of the impurity concentration in the n-type cathode layer.