The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 04, 2022
Filed:
Jul. 17, 2020
Samsung Electronics Co., Ltd., Suwon-si, KR;
Yoonyoung Choi, Seoul, KR;
Byunghyun Lee, Hwaseong-si, KR;
Byeongjoo Ku, Incheon, KR;
Seungjin Kim, Hwaseong-si, KR;
Sangjae Park, Seoul, KR;
Jinwoo Bae, Yongin-si, KR;
Hangeol Lee, Suwon-si, KR;
Bowo Choi, Suwon-si, KR;
Hyunsil Hong, Hwaseong-si, KR;
Samsung Electronics Co., Ltd., Suwon-si, KR;
Abstract
Capacitor forming methods may include sequentially forming a first mold layer, a first support material layer, and a second mold layer on a substrate, forming a mask pattern on the second mold layer, forming a recess in the second mold layer, the first support material layer, and the first mold layer using the mask pattern as a mask, forming a lower electrode in the recess, removing the mask pattern by a dry cleaning process, reducing a width of an upper portion of the lower electrode, removing the first mold layer, forming a dielectric layer on a surface of the lower electrode, and forming an upper electrode on the dielectric layer.