The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 04, 2022

Filed:

Jun. 18, 2020
Applicants:

Hefei Xinsheng Optoelectronics Technology Co., Ltd., Hefei, CN;

Boe Technology Group Co., Ltd., Beijing, CN;

Inventors:

Yongchao Huang, Beijing, CN;

Jun Cheng, Beijing, CN;

Dongfang Wang, Beijing, CN;

Jun Liu, Beijing, CN;

Leilei Cheng, Beijing, CN;

Liangchen Yan, Beijing, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/32 (2006.01); H01L 51/56 (2006.01);
U.S. Cl.
CPC ...
H01L 27/3258 (2013.01); H01L 27/3272 (2013.01); H01L 27/3276 (2013.01); H01L 51/56 (2013.01); H01L 2227/323 (2013.01);
Abstract

An array substrate, a manufacturing method thereof, and a display device are provided. The array substrate includes: a base substrate; a first signal line on the base substrate; a first buffer layer provided on the base substrate and covering the first signal line; a second signal line on a side of the first buffer layer facing away from the base substrate; a first insulating layer provided on the base substrate and covering the second signal line; and a thin film transistor on a side of the first insulating layer facing away from the base substrate, the thin film transistor including a gate electrode, a source electrode and a drain electrode. A thickness of the first signal line is greater than that of the gate electrode, and a thickness of the second signal line is greater than that of the source electrode or the drain electrode.


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