The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 04, 2022

Filed:

Sep. 28, 2020
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Shinjae Kang, Seoul, KR;

Woosung Lee, Yongin-si, KR;

Jeonggil Lee, Hwaseong-si, KR;

Hanmei Choi, Seoul, KR;

Hauk Han, Hwaseong-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/11556 (2017.01); H01L 27/11519 (2017.01); H01L 27/11526 (2017.01); H01L 23/522 (2006.01); H01L 27/11573 (2017.01); H01L 27/11582 (2017.01); H01L 27/11565 (2017.01);
U.S. Cl.
CPC ...
H01L 27/11556 (2013.01); H01L 23/5226 (2013.01); H01L 27/11519 (2013.01); H01L 27/11526 (2013.01); H01L 27/11565 (2013.01); H01L 27/11573 (2013.01); H01L 27/11582 (2013.01);
Abstract

Semiconductor devices including a substrate including a cell array region and a through electrode region, an electrode stack on the substrate and including electrodes, vertical structures penetrating the electrode stack within the cell array region, vertical fence structures within an extension region and surrounding the through electrode region, and insulating layers being inside a perimeter defined by the vertical fence structures and being at the same level as the electrodes may be provided. The electrodes may include first protrusions protruding between the vertical fence structures in a plan view.


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