The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 04, 2022
Filed:
Jun. 22, 2021
Applicant:
Nanya Technology Corporation, New Taipei, TW;
Inventor:
Chao-Wen Lay, Miaoli County, TW;
Assignee:
NANYA TECHNOLOGY CORPORATION, New Taipei, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/108 (2006.01);
U.S. Cl.
CPC ...
H01L 27/10885 (2013.01); H01L 27/10805 (2013.01);
Abstract
A semiconductor device includes a semiconductor structure, a first dielectric layer and a plurality of multilayer stacks. The semiconductor structure includes conductive features therein. The first dielectric layer is on the semiconductor structure. The multilayer stacks are arranged on the first dielectric layer. Each of the multilayer stacks comprises a semiconductor layer over the first dielectric layer, a conductive layer over the semiconductor layer and a second dielectric layer over the conductive layer. The second dielectric layer includes a top portion and a bottom portion wider than the top portion.