The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 04, 2022

Filed:

Feb. 27, 2020
Applicant:

Kioxia Corporation, Tokyo, JP;

Inventors:

Masaharu Wada, Kanagawa, JP;

Keiji Ikeda, Kanagawa, JP;

Assignee:

KIOXIA CORPORATION, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/108 (2006.01); H01L 23/528 (2006.01); H01L 29/78 (2006.01); G11C 14/00 (2006.01); H01L 29/10 (2006.01); H01L 29/66 (2006.01); H01L 29/24 (2006.01);
U.S. Cl.
CPC ...
H01L 27/10805 (2013.01); G11C 14/0009 (2013.01); H01L 23/528 (2013.01); H01L 27/108 (2013.01); H01L 27/1085 (2013.01); H01L 27/10873 (2013.01); H01L 29/1037 (2013.01); H01L 29/24 (2013.01); H01L 29/66969 (2013.01); H01L 29/7827 (2013.01);
Abstract

According to one embodiment, a semiconductor storage device includes a plurality of first wires extending in a first direction, a plurality of second wires extending in a second direction intersecting the first direction, and a plurality of first semiconductor transistors. Each first semiconductor transistor is respectively connected between one of the plurality of first wires and one of the plurality of second wires. Each first semiconductor transistor includes a gate electrode connected to the respective first wire and a channel layer on a first surface of the second wire and also a side surface of the respective second wire.


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