The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 04, 2022

Filed:

Oct. 21, 2020
Applicants:

Cornell University, Ithaca, NY (US);

The Penn State Research Foundation, University Park, PA (US);

Inventors:

Patrick Vogt, Ithaca, NY (US);

Darrell G. Schlom, Ithaca, NY (US);

Felix V. E. Hensling, Ithaca, NY (US);

Kathy Azizie, Plainfield, NJ (US);

Zi-Kui Liu, State College, PA (US);

Brandon J. Bocklund, State College, PA (US);

Shun-Li Shang, State College, PA (US);

Assignees:

Cornell University, Ithaca, NY (US);

The Penn State Research Foundation, University Park, PA;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); C30B 29/16 (2006.01); C30B 23/06 (2006.01); H01L 29/24 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02631 (2013.01); C30B 23/066 (2013.01); C30B 29/16 (2013.01); H01L 21/02565 (2013.01); H01L 29/24 (2013.01);
Abstract

Molecular-beam epitaxy (MBE) and more particularly suboxide MBE (S-MBE) and related structures are disclosed. S-MBE is disclosed that includes the use of a molecular beam of a suboxide that may be subsequently oxidized in a single step reaction to form an oxide film. By way of example, for a gallium oxide (GaO) film, a molecular beam including a suboxide of gallium (GaO) may be provided. S-MBE may be performed in adsorption-controlled regimes where there is an excess of source material containing species in order to promote high growth rates for oxide films with improved crystallinity. Source mixtures for providing molecular beams of suboxides are disclosed that include mixtures of a particular element and an oxide of the element in ratios that promote such adsorption-controlled growth regimes. Related structures include oxide films having increased thickness with reduced crystal defects, including single polymorph films of gallium oxide.


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