The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 04, 2022

Filed:

Mar. 10, 2021
Applicant:

SK Hynix Inc., Icheon-si Gyeonggi-do, KR;

Inventors:

Sungmook Lim, Icheon-si Gyeonggi-do, KR;

In Gon Yang, Icheon-si Gyeonggi-do, KR;

Jae Hyeon Shin, Icheon-si Gyeonggi-do, KR;

Hyung Jin Choi, Icheon-si Gyeonggi-do, KR;

Assignee:

SK hynix Inc., Icheon-si, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/04 (2006.01); G11C 29/02 (2006.01); G11C 16/26 (2006.01); G11C 16/24 (2006.01);
U.S. Cl.
CPC ...
G11C 29/026 (2013.01); G11C 16/0483 (2013.01); G11C 16/24 (2013.01); G11C 16/26 (2013.01);
Abstract

The present technology relates to an electronic device. For example, the present technology relates to a memory device and a method of operating the memory device. A memory device according to an embodiment includes a memory cell, a page buffer, and a test performer configured to control the page buffer to sequentially apply a first test voltage and a second test voltage of a level lower than a level of the first test voltage to a sensing node of the page buffer through a bit line, and detect a defect of the sensing node according to whether a potential level of the sensing node is changed.


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