The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 04, 2022

Filed:

Aug. 24, 2020
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventor:

Saugata Das Purkayastha, Bangalore, IN;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/34 (2006.01); G11C 16/08 (2006.01); G11C 16/20 (2006.01); G11C 7/10 (2006.01); G11C 16/30 (2006.01); G11C 16/04 (2006.01); G11C 16/26 (2006.01); G11C 16/10 (2006.01);
U.S. Cl.
CPC ...
G11C 16/3404 (2013.01); G11C 7/1006 (2013.01); G11C 7/1072 (2013.01); G11C 16/0433 (2013.01); G11C 16/08 (2013.01); G11C 16/10 (2013.01); G11C 16/20 (2013.01); G11C 16/26 (2013.01); G11C 16/30 (2013.01); G11C 16/3427 (2013.01); G06F 2212/7203 (2013.01); G11C 16/0483 (2013.01);
Abstract

Embodiments herein disclose a method for managing seed value for data scrambling in a NAND memory. The method includes detecting, by a NAND controller, a first scrambling of the data of a word line in the NAND memory. The method further includes caching, by the NAND controller, at least one of a last written data of the word line post the first scrambling for each open block in a Dynamic Random Access Memory (DRAM) for programming the word line, and a super page of the last written data of the word line in the DRAM for programming the super page. The method can be used to manage the seed value which is used for NAND page scrambling, which can reduce retention effect. As a result, the retention recycles for the NAND cells may be reduced, which may improve endurance.


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