The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 27, 2022

Filed:

Apr. 03, 2021
Applicants:

David L. Whitney, Saratoga, CA (US);

Manuel M. Del Arroz, Diablo, CA (US);

Inventors:

David L. Whitney, Saratoga, CA (US);

Manuel M. Del Arroz, Diablo, CA (US);

Assignee:

Other;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H02H 9/02 (2006.01); H02H 9/04 (2006.01); H03K 19/0185 (2006.01); H02H 1/00 (2006.01);
U.S. Cl.
CPC ...
H02H 9/046 (2013.01); H02H 1/0007 (2013.01); H03K 19/018507 (2013.01);
Abstract

Voltage clamping and level shifting is provided. A first reverse direction high-electron-mobility transistor includes a source connected to an input pad, and a drain connected to a first reference voltage. A second reverse direction high-electron-mobility transistor includes a source and a gate connected to a second reference voltage, and a drain connected to the input pad. A gate of the first reverse direction high-electron-mobility transistor is connected to the second reference voltage. Level shifting is provided by an arrangement of three high-electron-mobility transistor and a resistive element


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