The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 27, 2022

Filed:

May. 04, 2017
Applicant:

California Institute of Technology, Pasadena, CA (US);

Inventors:

Aroutin Khachaturian, Pasadena, CA (US);

Seyed Ali Hajimiri, La Canada, CA (US);

Behrooz Abiri, Pasadena, CA (US);

Seyed Mohammadreza Fatemi, Pasadena, CA (US);

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01Q 3/26 (2006.01); H01Q 21/22 (2006.01); H01Q 21/06 (2006.01); H01Q 21/00 (2006.01);
U.S. Cl.
CPC ...
H01Q 3/2676 (2013.01); H01Q 21/0087 (2013.01); H01Q 21/061 (2013.01); H01Q 21/065 (2013.01); H01Q 21/22 (2013.01);
Abstract

A phased array includes, in part, M×N photonic chips each of which includes, in part, an array of transmitters and an array of receivers. At least one of M and/or N is an integer greater than one. The transmitter arrays in each pair of adjacent photonics chips are spaced apart by a first distance and the receiver arrays in each pair of adjacent photonics chips are spaced apart by a second distance. The first and second distances are co-prime numbers. Optionally, at least a second subset of the M×N photonic chips is formed by rotating a first subset of the M×N photonic chips.


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