The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 27, 2022
Filed:
May. 20, 2019
Samsung Electronics Co., Ltd., Suwon-si, KR;
Jonguk Kim, Yongin-si, KR;
Young-Min Ko, Hwaseong-si, KR;
Byongju Kim, Hwaseong-si, KR;
Jaeho Jung, Seoul, KR;
Dongsung Choi, Hwaseong-si, KR;
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, KR;
Abstract
A method of manufacturing a variable resistance memory device may include: forming a memory cell including a variable resistance pattern on a substrate; performing a first process to deposit a first protective layer covering the memory cell; and performing a second process to deposit a second protective layer on the first protective layer. The first process and the second process may use the same source material and the same nitrogen reaction material, and a nitrogen content in the first protective layer may be less than a nitrogen content in the second protective layer.