The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 27, 2022
Filed:
Nov. 27, 2020
International Business Machines Corporation, Armonk, NY (US);
Karthik Yogendra, Albany, NY (US);
Praneet Adusumilli, Somerset, NJ (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A method for forming an in-situ drift-mitigation liner on a sidewall of a phase-change material (PCM) device stack includes providing an intermediate device including a substrate including a bottom wiring portion, a bottom electrode metal layer, a drift-mitigation liner layer, an active area layer, a carbon layer, a top electrode metal layer, patterning the top electrode metal layer to form a top electrode, performing a first intermediate angle ion beam etch (IBE), etching the carbon layer and the active area layer, which are formed on the drift-mitigation liner, to form a carbon portion and an active area portion of the PCM device stack, and performing a low angle IBE, etching the drift-mitigation liner and redepositing material etched from the drift-mitigation liner as a conductive liner material on sidewalls of the PCM device stack including exposed portions of the carbon portion, the active area portion, and the top electrode.