The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11456410 B1

Date of Patent:

Sep. 27, 2022

Filed:

Jun. 04, 2020

Three-dimensional (3d) magnetic memory devices comprising a magnetic tunnel junction (mtj) having a metallic buffer layer

Applicant:

Integrated Silicon Solution, (Cayman) Inc., Grand Cayman, KY;

Inventors:

Marcin Gajek, Berkeley, CA (US);

Michail Tzoufras, Sunnyvale, CA (US);

Assignee:

Integrated Silicon Solution, (Cayman) Inc., Grand Cayman, KY;

Attorney:

Primary Examiner:

Younes Boulghassoul

Int. Cl.

CPC ...

H01L 27/22 (2006.01); G11C 11/16 (2006.01); H01L 43/08 (2006.01); H01L 43/10 (2006.01); H01L 43/12 (2006.01); H01L 43/04 (2006.01); H01L 43/14 (2006.01);

U.S. Cl.

CPC ...

H01L 43/04 (2013.01); G11C 11/161 (2013.01); H01L 27/228 (2013.01); H01L 43/08 (2013.01); H01L 43/14 (2013.01); H01L 43/10 (2013.01); H01L 43/12 (2013.01);

Abstract

A magnetic memory device comprises a cylindrical core and a plurality of layers surrounding the core. The plurality of layers include a metallic buffer layer, a ferromagnetic storage layer, a barrier layer, and a ferromagnetic reference layer. The cylindrical core, the metallic buffer layer, the ferromagnetic storage layer, the barrier layer, and the ferromagnetic reference layer collectively form a magnetic tunnel junction. A magnetization of the ferromagnetic layer storage parallels an interface between the metallic buffer layer and ferromagnetic storage layer.

Find Patent Forward Citations