The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 27, 2022

Filed:

Dec. 14, 2018
Applicants:

Ordos Yuansheng Optoelectronics Co., Ltd., Inner Mongolia, CN;

Boe Technology Group Co., Ltd., Beijing, CN;

Inventors:

Nini Bai, Beijing, CN;

Liangliang Liu, Beijing, CN;

Liang Tang, Beijing, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/786 (2006.01); H01L 29/66 (2006.01); H01L 29/417 (2006.01);
U.S. Cl.
CPC ...
H01L 29/78621 (2013.01); H01L 29/41733 (2013.01); H01L 29/66742 (2013.01); H01L 29/78696 (2013.01);
Abstract

A thin film transistor, a manufacturing method thereof, an array substrate and an electronic device are disclosed. The manufacturing method of the thin film transistor includes: forming an active layer pattern on a base substrate; forming a gate insulating layer on the active layer pattern; the gate insulating layer includes a first portion, a second portion and a third portion, the third portion is on both sides of the first portion, the second portion is between the first portion and the third portion on at least one side, and the thickness of the second portion is larger than that of the third portion.


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