The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 27, 2022
Filed:
Dec. 19, 2018
Lapis Semiconductor Co., Ltd., Yokohama, JP;
Toshiyuki Orita, Miyazaki, JP;
Tomomi Yamanobe, Miyazaki, JP;
Makoto Higashihira, Miyazaki, JP;
Yuuki Doi, Miyazaki, JP;
Toshifumi Kobe, Miyazaki, JP;
Masao Tsujimoto, Miyazaki, JP;
Takao Kaji, Miyazaki, JP;
Kiyofumi Kondou, Miyazaki, JP;
LAPIS Semiconductor Co., Ltd., Yokohama, JP;
Abstract
The disclosure reduces the risk of collapse of the wall surrounding the trench and suppresses the withstand voltage fluctuation that accompanies the manufacturing variation for a semiconductor device having a super junction structure. The semiconductor device includes a drift layer of a first conductivity type and a plurality of embedded parts embedded in the drift layer. The embedded parts are of a second conductivity type different from the first conductivity type, and the embedded parts are arranged with a first direction as a longitudinal direction and spaced from each other along a second direction that intersects the first direction. A width of each of the embedded parts in the second direction changes continuously along the first direction.